MURF2005-CT Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 20.0 Ampere Isolated Glass Passivated Ultrafast Recovery Rectifier

MURF2005 thru MURF2060
®
MURF2005 thru MURF2060
Pb
Pb Free Plating Product
20.0 Ampere Isolated Glass Passivated Ultrafast Recovery Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System etc..
Mechanical Data
Case: Molded plastic Isolated/Insulated ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:As marked on diode body
Mounting position: Any
Weight: 2.03 grams
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Positive
Common Cathode
Suffix "CT"
Case
Negative
Common Anode
Suffix "CA"
Case
Doubler
Series Connection
Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "CT"
Common Anode Suffix "CA"
Anode and Cathode Coexistence Suffix "GD"
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
MURF2005CT MURF2010CT MURF2020CT MURF2030CT MURF2040CT MURF2060CT
SYMBOL UNIT MURF2005CA MURF2010CA MURF2020CA MURF2030CA MURF2040CA MURF2060CA
MURF2005GD MURF2010GD MURF2020GD MURF2030GD MURF2040GD MURF2060GD
VRRM
50
100
200
300
400
600
V
VRMS
35
70
140
210
280
420
V
VDC
50
100
200
300
400
600
V
Maximum Average Forward Rectified
Current TC=125^oC
IF(AV)
20.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
200
(JEDEC method)
175
A
Maximum Instantaneous Forward Voltage
VF
@ 10.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.975
120
1.3
10.0
250
35
70
-55 to +150
1.5
V
uA
uA
nS
pF
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/