MURF1620DR Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Reverse Doubler Polarity Ultra Fast Recovery Half Bridge Rectifier

MURF1620DR thru MURF1660DR
®
MURF1620DR thru MURF1660DR
Pb
Pb Free Plating Product
16.0 Ampere Reverse Doubler Polarity Ultra Fast Recovery Half Bridge Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit : inch (mm)
Mechanical Data
Case: Fully isolated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
Case
Case
Case
Case
Positive
Negative
Doubler
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "C"
Suffix "A"
Suffix "D"
Suffix "DR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL _MURF1620DR MURF1640DR MURF1660DR UNIT
Maximum Recurrent Peak Reverse Voltage VRRM
200
400
Maximum RMS Voltage
VRMS
140
280
Maximum DC Blocking Voltage
VDC
200
400
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
16.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
175
150
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 8.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
5.0
250
35
90
2.2
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
600
V
420
V
600
V
A
A
1.7
V
uA
uA
nS
pF
o_CW
o_C
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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