MURF1620CTA Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16 Ampere Insulated Common Anode Fast Recovery Half Bridge Rectifiers

MURF1620CTA thru MURF1660CTA
®
Pb Free Plating Product
MURF1620CTA/MURF1640CTA/MURF1660CTA
Pb
16 Ampere Insulated Common Anode Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit:mm
Mechanical Data
Case: Fully Isolated Molding TO-220FP
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Positive
Negative
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CT"
Suffix "CTA"
Suffix "CTD"
Suffix "CTS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL MURF1620CTA MURF1640CTA MURF1660CTA UNIT
Maximum Recurrent Peak Reverse Voltage VRRM
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
400
600
280
420
400
600
16.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
175
150
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
1.3
1.7
@ 8.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
5.0
100
Maximum Reverse Recovery Time (Note 1) Trr
35
Typical junction Capacitance (Note 2)
CJ
90
Typical Thermal Resistance (Note 3)
R JC
2.2
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
V
V
V
A
A
V
uA
uA
nS
pF
o_C/W
o_C
Rev.06
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/