MURF1620CT-CTR Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Unipolar/Common Cathode Ultrafast Recovery Rectifiers

MURF1620CT thru MURF1660CT
®
MURF1620CT thru MURF1660CT
Pb
Pb Free Plating Product
16.0 Ampere Unipolar/Common Cathode Ultrafast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment/Inverters and Converters
Plating Power Supply/SMPS and UPS
Car Audio Amplifier and Sound Device System
Mechanical Data
Case: Molded plastic Isolated/Insulated ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.03 grams
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Suffix "CT"
Suffix "CTR"
Doubler
Suffix "CTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
MURF1620CT
MURF1620CTR
MURF1620CTD
200
Maximum RMS Voltage
VRMS
140
MURF1640CT
MURF1640CTR
MURF1640CTD
400
280
MURF1660CT
MURF1660CTR ^UNIT
MURF1660CTD
600
V
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
16.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
175
(JEDEC method)
150
A
Maximum Instantaneous Forward Voltage
VF
0.98
@ 8.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
10.0
250
35
90
2.2
-55 to + 150
1.7
V
uA
uA
nS
pF
o_CW
o_C
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/