MURF1520G Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 15.0 Ampere Glass Passivated Chip Ultrafast Recovery Rectifier Diode

MURF1520G thru MURF1560G
®
Pb Free Plating Product
MURF1520G thru MURF1560G
Pb
15.0 Ampere Glass Passivated Chip Ultrafast Recovery Rectifier Diode
Features
‹ Glass passivated junction/EPI(PG process)
‹ Fast recovery time for hight efficiency
‹ Low reverse leakage current
‹ High surge capacity
Mechanical Data
‹ Case: Insulated Plastic TO-220F-2L FullPak
‹ Terminals: Lead solderable per MIL-STD-202, Method 208
‹ Polarity: As marked
‹ Standard packaging: Any
‹ Weight: 0.08 ounces, 1.9 gram approximately
ITO-220AC
.419(10.66)
.387(9.85)
.167(3.73)
.122(3.10)
2
.038(0.96)
.019(0.50)
Unit: mm
.196(5.00)
.163(4.16)
.118(3.00)
.079(2.00)
.025(0.65)MAX
.1(2.54)
.1(2.54)
TO-220F-2L
Maximum Ratings and Electrical Characteristics
Ratings at 25^oC ambient temperature unless otherwise specified.
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T_C=100^oC
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 15.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I_F=0.5A, I_R=1.0A, I_rr=0.25A
@T_J=25^oC
@T_J=100^oC
Typical junction capacitance at 4.0V, 1MHz
Typical thermal resistance
Operating junction and storage temperature range
Symbol MURF1505G MURF1510G MURF1520G MURF1540G MURF1560G Unit
V_RRM
50
V_RMS
35
V_DC
50
I_F(AV)
I_FSM
V_F
I_R
t_rr
C_J
R_θJC
T_J, T_STG
100
70
100
0.98
35
200
140
200
15.0
150.0
5.0
250
160
3.0
-55 to +150
400
600
280
420
400
600
1.30
1.70
60
Volts
Volts
Volts
Amps
Amps
Volts
uA
nS
pF
o_C/W
o_C
Notes: 1. Pulse test: Pulse width 300 usec, Duty cycle 2%
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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