MUR820H Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 8.0 Ampere Ultra Fast Rectifiers for Power Chargers

MUR820H thru MUR860H
®
Pb Free Plating Product
MUR820H thru MUR860H
Pb
8.0 Ampere Ultra Fast Rectifiers for Power Chargers
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
TO-220AC
Unit : inch (mm)
Mechanical Data
2
¬ Case: Molded TO-220AC
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:Color band denotes cathode
¬ Mounting position: Any
¬ Weight: 2.03 gram approximately
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL MUR820H MUR840H MUR860H UNIT
Maximum Recurrent Peak Reverse Voltage VRRM
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 8.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
400
280
400
8.0
125
1.3
10.0
250
35
65
2.2
-55 to + 150
720
V
420
V
600
V
A
A
1.7
V
uA
uA
nS
pF
o_CW
o_C
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/