MUR3060G Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 30 Ampere Single Glass Passivated Chip Ultrafast Recovery Rectifier Diode

MUR3060G
®
Pb Free Plating Product
MUR3060G
Pb
30 Ampere Single Glass Passivated Chip Ultrafast Recovery Rectifier Diode
Features
‹ Glass passivated chip junction EPI wafer
‹ Ultrafast recovery time for high efficiency
‹ Low reverse leakage current
‹ High surge capacity
Mechanical Data
‹ Case: TO-220AC heatsink
‹ Terminals: Lead solderable per MIL-STD-202, Method 208
‹ Polarity: As marked
‹ Standard packaging: Any
‹ Weight: 2.5 gram approximately
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
TO-220AC Heatsink
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125^oC
VRRM
VRMS
VDC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
@ 30.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
CJ
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
MUR3060G
600
420
600
30.0
250
1.7
5.0
100
60
120
-55 to +150
UNIT
V
V
V
A
A
V
uA
uA
nS
pF
o_C
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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