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MUR3020PA Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 30.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifier
MUR3020PA thru MUR3060PA
®
MUR3020PA thru MUR3060PA
Pb
Pb Free Plating Product
30.0 Ampere Dual Common Anode Ultra Fast Recovery Rectifier
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260oC, 0.16”(4.06mm)from case for 10 seconds
Mechanical Data
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
TO-3P/TO-247AD
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
Unit: inch (mm)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
.095(2.4)
.030(0.75)
.017(0.45)
Positive
Common Cathode
Suffix "PT"
Negative
Common Anode
Suffix "PA"
Doubler
Series Connection
Suffix "PD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
MUR3020PT
MUR3020PA
MUR3020PD
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=125oC
IF(AV)
MUR3040PT
MUR3040PA
MUR3040PD
400
280
400
30.0
MUR3060PT
MUR3060PA UNIT
MUR3060PD
600
V
420
V
600
V
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
300
A
Maximum Instantaneous Forward Voltage
VF
0.98
1.3
@ 15.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
10
500
Maximum Reverse Recovery Time (Note 1) Trr
35
Typical junction Capacitance (Note 2)
CJ
150
1.7
V
uA
uA
nS
pF
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to +150
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.02
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/