MUR3005PT Datasheet, PDF (1/2 Pages) Digitron Semiconductors – 30A ULTRAFAST RECTIFIER

MUR3005PT thru MUR3060PT
®
MUR3005PT thru MUR3060PT
Pb
Pb Free Plating Product
30 Ampere Glass Passivated Ultrafast Rectifiers
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260^oC, 0.16”(4.06mm)from case for 10 seconds
Mechanical Data
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 grams
TO-3P/TO-247AD
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
Unit: inch (mm)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
.095(2.4)
.030(0.75)
.017(0.45)
Positive PT
Common Cathode
Negative PT
Suffix "R"
Common Anode
Doubler PT
Suffix "D"
Series Connection
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
MUR
3005PT
MUR
MUR
3010PT 3020PT
MUR
3030PT
MUR
3040PT
MUR
3060PT
UNIT
Maximum Recurrent Peak Reverse Voltage VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC
50
Maximum Average Forward Rectified
Current TC=125^oC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
@ 15.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Operating Junction and Storage
Temperature Range
TJ, TSTG
100
200
300
400
70
140
210
280
100
200
300
400
30.0
300
0.95
35
1.3
10
500
150
-55 to +150
600
V
420
V
600
V
A
A
1.5
V
uA
uA
60 ^nS
pF
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
© 2006 Thinki Semiconductor Co.,Ltd.
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