MUR3005-PT Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes

MUR3005 thru MUR3060
®
MUR3005 thru MUR3060
Pb
Pb Free Plating Product
30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260^oC, 0.16”(4.06mm)from case for 10 seconds
Mechanical Data
Cases: TO-3P/TO-247AD Package Type
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 grams
TO-3P/TO-247AD
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
Unit: inch (mm)
0.199(5.05)
0.175(4.45)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.095(2.40)
0.030(0.75)
0.017(0.45)
Positive
Suffix "PT"
Negative
Suffix "PA"
Doubler
Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "PT"
Common Anode Suffix "PA"
Anode and Cathode Coexistence Suffix "GD"
Maximum Recurrent Peak Reverse Voltage
MUR3005PT MUR3010PT MUR3020PT MUR3030PT MUR3040PT MUR3060PT
SYMBOL _{MUR3005PA MUR3010PA MUR3020PA MUR3030PA MUR3040PA MUR3060PA} UNIT
MUR3005GD MUR3010GD MUR3020GD MUR3030GD MUR3040GD MUR3060GD
VRRM
50
100
200
300
400
600
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
V
Maximum Average Forward Rectified
Current TC=125^oC
IF(AV)
30.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
300
A
Maximum Instantaneous Forward Voltage
VF
@ 15.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
0.95
1.3
10
500
35
150
1.5
V
uA
uA
60 ^nS
pF
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to +150
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
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© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/