MUR2020AT Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 20 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers

MUR2020AT thru MUR2060AT
®
Pb Free Plating Product
MUR2020AT/MUR2040AT/MUR2060AT
Pb
20 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Case
Case
Case
Positive
Negative
Series
Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CT"
Suffix "AT"
Suffix "ST"
Suffix "DT"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL _{MUR2020AT MUR2040AT MUR2060AT} UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125^oC
VRRM
VRMS
VDC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
TJ, TSTG
200
140
200
200
0.98
120
400
600
V
280
420
V
400
600
V
20.0
A
175
A
1.3
1.7
V
5.0
uA
100
uA
35
nS
70
pF
-55 to +150
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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http://www.thinkisemi.com/