MUR1620N Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Unipolar/Common Anode Ultra Fast Recovery Rectifier

MUR1620N thru MUR1660N
®
MUR1620N thru MUR1660N
Pb
Pb Free Plating Product
16.0 Ampere Unipolar/Common Anode Ultra Fast Recovery Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverters/Converters)
Plating Power Supply,SMPS and UPS
Car Audio Amplifier and Sound Device System
Mechanical Data
Case:TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.03 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Suffix "CT"
Suffix "N"
Doubler Reverse Doubler
Suffix "D"
Suffix "E"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM
VRMS
VDC
MUR1620CT
MUR1620N
MUR1620D
MUR1620E
200
140
200
MUR1640CT
MUR1640N
MUR1640D
MUR1640E
400
280
400
MUR1660CT
MUR1660N _UNIT
MUR1660D
MUR1660E
600
V
420
V
600
V
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
16.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
175
150
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 8.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
10.0
250
35
90
2.2
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
A
1.7
V
uA
uA
nS
pF
o_CW
o_C
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/