MUR1620G Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes

MUR1620G thru MUR1660G
®
MUR1620G thru MUR1660G
Pb
Pb Free Plating Product
16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
Mechanical Data
¬ Case: Molded TO-220AC
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:Color band denotes cathode
¬ Mounting position: Any
¬ Weight: 2.1 gram approximately
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
@TA =125℃
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 16.0A DC
Maximum DC Reverse Current @TJ=25℃
at Rated DC Blocking Voltage @TJ=125℃
Maximum Reverse Recovery Time(Note1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
I(AV)
MUR1620G
200
140
200
IFSM
VF
IR
TRR
CJ
RθJA
TJ,TSTG
0.95
NOTES:1.Measured with IF=0.5A,IR=1A,IRR=0.25A
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
3.Thermal resistance junction to ambient
MUR1640G
400
280
400
16.0
300
1.25
5.0
50
35-50
80
2.0
-55 to + 150
MUR1660G
600
420
600
UNIT
V
V
V
A
A
1.50
V
μA
nS
pF
℃/W
℃
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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