MUR1620CTR-CT Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifier

MUR1620CTR thru MUR1660CTR
®
MUR1620CTR thru MUR1660CTR
Pb
Pb Free Plating Product
16.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifier
Feature
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverters/Converters)
Plating Power Supply,Adaptor,SMPS and UPS
Car Audio Amplifiers and Sound Device System
Mechanical Data
Case:TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Suffix "CT"
Case
Negative
Common Anode
Suffix "CTR"
Case
Doubler
Tandem Polarity
Suffix "CTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
MUR1620CT
SYMBOL _MUR1620CTR
MUR1620CTD
VRRM
200
MUR1640CT
MUR1640CTR
MUR1640CTD
400
MUR1660CT
MUR1660CTR ^UNIT
MUR1660CTD
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
16.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
175
(JEDEC method)
150
A
Maximum Instantaneous Forward Voltage
VF
0.98
1.3
@ 8.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
10.0
250
Maximum Reverse Recovery Time (Note 1) Trr
35
Typical junction Capacitance (Note 2)
CJ
90
Typical Thermal Resistance (Note 3)
R JC
2.2
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
1.7
V
uA
uA
nS
pF
o_C/W
o_C
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
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http://www.thinkisemi.com/