MUR1620CT-A Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Heatsink Common Cathode Ultra Fast Recovery Rectifier

MUR1620CT thru MUR1660CT
®
MUR1620CT thru MUR1660CT
Pb
Pb Free Plating Product
16.0 Ampere Heatsink Common Cathode Ultra Fast Recovery Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverter/Converter)
Plating Power Supply,SMPS and UPS
Car Audio Amplifier and Sound Device System
Mechanical Data
Case: TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Suffix "CT"
Suffix "A"
Doubler
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100^oC
VRRM
VRMS
VDC
IF(AV)
MUR1620CT
MUR1620A
MUR1620D
200
140
200
MUR1640CT
MUR1640A
MUR1640D
400
280
400
MUR1660CT
MUR1660A ^UNIT
MUR1660D
600
V
420
V
600
V
16.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
175
150
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 8.0 A
1.3
1.7
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
10.0
250
Maximum Reverse Recovery Time (Note 1) Trr
35
Typical junction Capacitance (Note 2)
CJ
90
Typical Thermal Resistance (Note 3)
R JC
2.2
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.04
A
V
uA
uA
nS
pF
o_CW
o_C
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/