MUR1020D-N Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 10.0 Ampere Heatsink Doubler Polarity Ultra Fast Recovery Rectifier

MUR1020D thru MUR1060D
®
MUR1020D thru MUR1060D
Pb
Pb Free Plating Product
10.0 Ampere Heatsink Doubler Polarity Ultra Fast Recovery Rectifier
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
Mechanical Data
¬ Case:TO-220AB Heatsink
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:As marked on diode body
¬ Mounting position: Any
¬ Weight: 2.2 gram approximately
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Doubler
Suffix "CT"
Suffix "N"
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100^oC
SYMBOL
VRRM
VRMS
VDC
IF(AV)
MUR1020CT
MUR1020N
MUR1020D
200
140
200
MUR1040CT
MUR1040N
MUR1040D
400
280
400
10.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
100
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 5.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
10.0
250
35
65
2.2
-55 to +150
MUR1060CT
MUR1060N ^UNIT
MUR1060D
600
V
420
V
600
V
A
A
1.7
V
uA
uA
nS
pF
o_CW
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/