MUR1020CA Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 10 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers

MUR1020CA thru MUR1060CA
®
Pb Free Plating Product
MUR1020CA/MUR1040CA/MUR1060CA
Pb
10 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
TO-220AB
9.90±0.20
φ3.60^±0.20
4.50±0.20
1.27±0.20
1.52±0.20
Unit:mm
1.30±0.20
2.40±0.20
Mechanical Data
Case: Heatsink TO-220AB/TO-220CE
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
2.54typ
2.54typ
0.80±0.20
0.50±0.20
Case
Negative
Common Anode
Suffix "CA"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL MUR1020CA
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100^oC
VRRM
VRMS
VDC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
@ 5.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
200
140
200
0.98
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
MUR1040CA
400
280
400
10.0
MUR1060CA ^UNIT
600
V
420
V
600
V
A
100
A
1.3
10.0
250
35
65
2.2
-55 to +150
1.7
V
uA
uA
nS
pF
o_C/W
o_C
Rev.06
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/