MJ21195G Datasheet, PDF (1/5 Pages) Thinki Semiconductor Co., Ltd. – 250 Watt Silicon Type Metal Package Power Transistor

MJ21195G/MJ21196G
®
Pb Free Plating Product
MJ21195G/MJ21196G
Pb
250 Watt Silicon Type Metal Package Power Transistor
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
• Total Harmonic Distortion Characterized
• High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
• Excellent Gain Linearity
• High SOA: 3 A, 80 V, 1 Second
SCHEMATIC
PNP
NPN
CASE 3
CASE 3
CASE 1–07
TO–204AA
(TO–3)
1
BASE
1
BASE
EMITTER 2
EMITTER 2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage – 1.5 V
Collector Current — Continuous
Collector Current — Peak ⁽¹⁾
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ≤ 10%.
VCEO(sus)
250
ICEO
—
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
250
400
5
400
16
30
5
250
1.43
–āā65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Symbol
Max
R_θJC
0.7
Unit
°C/W
Typical
—
—
Max
Unit
—
Vdc
100
µAdc
(continued)
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/5
http://www.thinkisemi.com/