MBR3035PT Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Schottky Rectifiers

MBR3035PT thru MBR30200PT
®
Pb Free Plating Product
MBR3035PT thru MBR30200PT
Pb
30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-247AD/TO-3P molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.2245 ounces, 6.3673 grams.
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.199(5.05)
0.175(4.45)
0.095(2.40)
0.030(0.75)
0.017(0.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200
PT PT PT PT PT PT PT PT
Maximum repetitive peak reverse voltage
V_RRM
35
45
50
60
90 100 150 200
Maximum RMS voltage
V_RMS
24
31
35
42
63
70 105 140
Maximum DC blocking voltage
V_DC
35
45
50
60
90 100 150 200
Maximum average forward rectified current
I_F(AV)
30
Peak repetitive forward current
(Rated V_R, Square wave, 20KHz)
I_FRM
30
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
200
A
Peak repetitive reverse surge Current (Note 1)
I_RRM
2
1
A
Maximum instantaneous forward voltage (Note 2)
I_F=15A, T_J=25℃
I_F=15A, T_J=125℃
I_F=30A, T_J=25℃
I_F=30A, T_J=125℃
-
0.75
0.85
0.95 1.05
V_F
0.60
0.65
0.75
0.92
-
V
0.82
-
-
1.02 1.10
0.73
-
-
0.98
-
Maximum reverse current @ rated VR T_J=25 ℃
T_J=125 ℃
1
I_R
20
15
0.5
10
0.1
mA
Voltage rate of change,(Rated V_R)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: 2.0μs Pulse Width, f=1.0KHz
dV/dt
R_θJC
T_J
T_STG
10,000
1.4
- 55 to +150
- 55 to +150
V/μs
O_C/W
O_C
O_C
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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