MBR1045CA Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes

MBR1035CA thru MBR10200CA
®
CREAT BY ART
MBR1035CA thru MBR10200CA
Pb
Pb Free Plating Product
10.0 Ampere Dual Common Anode Schottky Barrier Rectifier Diodes
Features
— Plastic material used carriers Underwriters
Laboratory Classification 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High surge capability
— For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
— Guard-ring for overvoltage protection
— High temperature soldering guaranteed:
260℃/10 seconds, 0.25"(6.35mm) from case
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.038(0.96)
.019(0.50)
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.025(0.65)MAX
Mechanical Data
— Cases: JEDEC TO-220AB molded plastic body
— Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position:Any
— Mounting torque: 5 in. - lbs, max
— Weight: 2.0 gram approximately
.1(2.54)
.1(2.54)
Case
Positive
Common Cathode
Suffix "CT"
Case
Negative
Common Anode
Suffix "CA"
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Symbol
V_RRM
MBR
1035
CA
35
Maximum RMS Voltage
V_RMS
24
Maximum DC Blocking Voltage
V_DC
35
MBR
1045
CA
45
31
45
MBR
1050
CA
50
35
50
MBR
1060
CA
60
42
60
MBR
1090
CA
90
63
90
MBR MBR MBR
10100 10150 10200
CA CA CA
100 150 200
70 105 140
100 150 200
Units
V
V
V
Maximum Average Forward Rectified Current
I_F(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
I_FRM
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
I_FSM
Peak Repetitive Reverse Surge Current (Note 1)
I_RRM
1.0
Maximum Instantaneous Forward Voltage at (Note 2)
IF=5A, T_A=25℃
0.70
IF=5A, T_A=125℃
V_F
0.57
IF=10A, T_A=25℃
0.80
IF=10A, T_A=125℃
0.67
Maximum Instantaneous Reverse Current @ T _A=25 ℃
at Rated DC Blocking Voltage
@ T _A=125 ℃
I_R
15
Voltage Rate of Change (Rated V _R)
dV/dt
Maximum Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
R_θJC
T_J
T_STG
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
10
120
0.5
0.80
0.85
0.65
0.75
0.90
0.95
0.75
0.85
0.1
10
2
10,000
1.5
- 65 to + 150
- 65 to + 175
A
A
A
0.88
0.78
V
0.98
0.88
mA
5
mA
V/us
℃/W
℃
℃
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
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