IRFZ44 Datasheet, PDF (1/2 Pages) Vishay Siliconix – Power MOSFET

IRFZ44
®
Pb Free Plating Product
IRFZ44
Pb
45 Ampere Typical N-Channel Trench Power MOSFETs
General Description
The IRFZ44 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM.
Features
● VDS=60V；ID=45A@ VGS=10V；
RDS(ON)<7.5mΩ @ VGS=10V
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
G DS
TO-251 Top View
Schematic Diagram
VDSS = 60 V
IDSS = 45 A
RDS(ON) = 6.0 mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS
Drain-Source Voltage (VGS=0V）
VGS
Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}
dv/dt
Peak Diode Recovery Voltage
PD
EAS
TJ,TSTG
Maximum Power Dissipation(Tc=25℃)
Derating Factor
Single Pulse Avalanche Energy ^{(Note 2)}
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=48.5A
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
Value
60
±25
45
40
200
30
130
1.9
360
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
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