IRFP150A Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Advanced Power MOSFET

IRFP150A
®
Pb Free Plating Product
IRFP150A
Pb
100V,60A Heatsink N-Channel Type Power MOSFET
General Features
 V_DS=100V,I_D=60A
R_dson≦30mΩ @V_GS=10V (Typ:25mΩ)
 Extended Safe Operating Area
 Low Reverse transfer capacitances
 100% Single Pulse avalanche energy Test
Application
 Power switching application
 Load switch
1. Gate {
{ ^{2. Drain}
●
◀▲
●
●
{ _{3. Source}
S
D
G
Electrical Characteristics @ Ta=25℃
a) Limited Parameters:
Symbol
VDSS
ID
IDM
VGS
Ptot
Tj
Eas
Parameter
Drain‐to‐Source Breakdown Voltage
Drain Current (continuous) at Tc=25℃
Drain Current (pulsed)
Gate to Source Voltage
Total Dissipation at Tc=25℃
Max. Operating Junction Temperature
Single Pulse Avalanche Energy
(unless otherwise specified)
Value
100
60
240
+/‐25
300
175
750
Units
V
A
A
V
W
℃
mj
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/3
http://www.thinkisemi.com/