IRF3205 Datasheet, PDF (1/5 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A⑤)

IRF3205
®
Pb Free Plating Product
IRF3205
Pb
N-Channel Trench Process Power MOSFET Transistor
General Description
The IRF3205 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low R_DS(ON) is suitable for PWM,
load switching .
Features
● V_DS=55V; I_D=105A@ V_GS=10V;
R_DS(ON)<6.0mΩ @ V_GS=10V
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● Inverter Application
G ^DS
TO-220CB Top View
Schematic Diagram
V_DS = 55 V
I_D = 105 A
R_DS(ON) = 5.0 mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS
Drain-Source Voltage (VGS=0V)
VGS
Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}
dv/dt
Peak Diode Recovery Voltage
PD
Maximum Power Dissipation(Tc=25℃)
Derating Factor
EAS
Single Pulse Avalanche Energy ^{(Note 2)}
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=40V,VBGB=10V,RG=25Ω
Value
55
±25
105
100
420
30
139
0.926
625
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Rev.05
© 2013 Thinki Semiconductor Co.,Ltd.
Page 1/5
http://www.thinkisemi.com/