HERA1603G Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Glass Passivated Process High Efficiency Rectifiers

HERA1601G thru HERA1608G
®
HERA1601G thru HERA1608G
Pb
Pb Free Plating Product
16.0 Ampere Glass Passivated Process High Efficiency Rectifiers
Features
Glass passivated chip junction
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
Mechanical Data
Case: Heatsink TO-220AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Symbol
HERA
1601G
HERA HERA
1602G 1603G
HERA
1604G
HERA
1605G
HERA HERA
1606G 1607G
HERA
1608G
V_RRM 50 100 200 300 400 600 800 1000
V_RMS
35
70 140 210 280 420 560 700
V_DC
50 100 200 300 400 600 800 1000
Units
V
V
V
Maximum Average Forward Rectified Current
I_F(AV)
16
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
I_FSM
250
Maximum Instantaneous Forward Voltage (Note 1)
@ 16 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T _A=25 ℃
@ T _A=125 ℃
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
V_F
I_R
Trr
Cj
R_θJC
T_J
T_STG
1.0
1.3
1.7
10
400
50
80
120
80
2.0
- 65 to + 150
- 65 to + 150
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
A
V
uA
uA
nS
pF
℃/W
℃
℃
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
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