HER3060PT Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 30.0 Ampere Dual SwitchMode Type High Efficiency Rectifier Diodes

HER3020PT thru HER3060PT
®
HER3020PT thru HER3060PT
Pb
Pb Free Plating Product
30.0 Ampere Dual SwitchMode Type High Efficiency Rectifier Diodes
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Special for inverter/high power motor control
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260^oC, 0.16”(4.06mm)from case for 10 seconds
Mechanical Data
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
TO-3P/TO-247AD
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
Unit: inch (mm)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
.095(2.4)
.030(0.75)
.017(0.45)
Positive
Common Cathode
Suffix "PT"
Negative
Common Anode
Suffix "PA"
Doubler
Series Connection
Suffix "PD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
HER3020PT
HER3020PA
HER3020PD
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=125^oC
IF(AV)
HER3040PT
HER3040PA
HER3040PD
400
280
400
30.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
300
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
@ 15.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
0.98
1.3
10
500
50
175
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to +150
HER3060PT
HER3060PA ^UNIT
HER3060PD
600
V
420
V
600
V
A
A
1.7
V
uA
uA
60
nS
145
pF
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.02
© 2006 Thinki Semiconductor Co.,Ltd.
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