HER1601GD Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Heatsink Dual Doubler Tandem High Efficiency Rectifier

HER1601GD thru HER1608GD
®
Pb Free Plating Product
HER1601GD thru HER1608GD
Pb
16.0 Ampere Heatsink Dual Doubler Tandem High Efficiency Rectifier
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approxiamtely
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Suffix "G"
Case
Negative
Common Anode
Suffix "GA"
Case
Doubler
Tandem Polarity
Suffix "GD"
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Symbol ^{HER HER HER HER HER HER HER HER}
1601GD 1602GD 1603GD 1604GD 1605GD 1606GD 1607GD 1608GD
V_RRM 50 100 200 300 400 600 800 1000
V_RMS
35
70 140 210 280 420 560 700
V_DC
50 100 200 300 400 600 800 1000
Units
V
V
V
I_F(AV)
16
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@8A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T _A=25 ℃
@ T _A=125 ℃
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
I_FSM
V_F
I_R
Trr
Cj
R_θJC
T_J
T_STG
125
1.0
1.3
1.7
10
400
50
80
80
50
1.5
- 65 to + 150
- 65 to + 150
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
A
V
uA
nS
pF
℃/W
℃
℃
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
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