GF2045MC Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 20.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier

GF2045MC thru GF20200MC
®
Pb Free Plating Product
GF2045MC thru GF20200MC
Pb
20.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier
Features
For surface mounted application
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260^oC/10 seconds at terminals
D ²PAK
Mechanical Data
Cases: JEDEC D²PAK /TO-263-2L molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.06 ounce, 1.70 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol _{GF2045MC GF2060MC GF20100MC GF20200MC} Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T_C=135^oC
Peak Repetitive Forward Current (Rated V_R, Square Wave,
20KHz) at Tc=135^oC
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=10A, TC=25^OC
IF=10A, TC=125^OC
IF=20A, TC=25^OC
IF=20A, TC=125^OC
Maximum Instantaneous Reverse Current @ Tc=25℃
at Rated DC Blocking Voltage
@ Tc=125℃
Voltage Rate of Change, (Rated V_R)
Typical Junction Capacitance
V_RRM
V_RMS
V_DC
I_(AV)
I_FRM
I_FSM
I_RRM
V_F
I_R
dV/dt
Cj
45
31
45
1.0
-
0.57
0.84
0.72
0.1
15
400
60
100
42
70
60
100
20
20
150
0.5
0.80
0.70
0.95
0.85
0.85
0.75
0.95
0.85
0.1
10
10,000
320
Typical Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
R_θJC
T_J
TSTG
1.0
-65 to +150
-65 to +175
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.
200
140
200
0.99
0.87
1.23
1.10
5.0
2.0
V
V
V
A
A
A
A
V
mA
mA
V/uS
pF
o_C/W
o_C
o_C
© 2006 Thinki Semiconductor Co.,Ltd.
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