GBJ15005 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 15A GLASS PASSIVATED BRIDGE RECTIFIER

GBJ15005 thru GBJ1510
®
Pb Free Plating Product
GBJ15005 thru GBJ1510
Pb
15.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS
Features
• Glass passivated chip junction
• Low forward voltage drop
• High surge overload rating of 240 A peak
• Ideal for printed circuit board
Mechanical Data
• Case: Molded plastic,GBJ(5S/6KBJ)
• Epoxy: UL 94V-0 rate flame retardant
• Terminals: Leads solderable per JESD22-B102,
Meet JESD 201 class 2 whisker test
• Mounting position: Any
GBJ
Dimensions in inches and (millimeters)
1.193(30.3)
1.169(29.7)
HOLE FOR NO.
6 SCREW
.189(4.8)
.173(4.4)
+ _.106(2.7)
.096(2.3)
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.119
(0.5) ^.800(20.3)
.697(17.7) .441(11.2)
~~-
.425(10.8)
.114(2.9)
.165(4.2) .708(18.0) ^.098(2.5)
.150(3.8) .669(17.0)
.402(1.1)
.386(0.9)
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
.150(3.8)
.134(3.4)
.184(3.4)
.122(3.1)
.031(0.8)
.023(0.6)
Absolute Maximum Ratings and Characteristics
Ratings at 25 ^OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL GBJ15005 GBJ1501 GBJ1502 GBJ1504 GBJ1506 GBJ1508 GBJ1510 UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@ 7.5 A
@ 15 A
Maximum reverse current @ rated V_R
T_J=25°C
T_J=125°C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
I²t
V_F
I_R
R_θJC
T_J
T_STG
50
100 200 400 600 800 1000
V
35
70
140 280 420 560 700
V
50
100 200 400 600 800 1000
V
15
A
240
A
239
A²s
1.0
1.1
10
500
0.8
- 55 to +150
- 55 to +150
V
μA
°C/W
°C
°C
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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