FQP65N06 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET

FQP65N06
®
FQP65N06
Pb
Pb Free Plating Product
65A,60V Heatsink Planar N-Channel Power MOSFET
Features
• 65A, 60V, R_DS(on) = 0.016Ω @V_GS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
1. Gate {
{ ^{2. Drain}
●
◀▲
●
●
{ _{3. Source}
BV_DSS = 60V
R_DS(ON) = 0.016 ohm
I_D = 65A
General Description
This N-channel enhancement mode field-effect power transistor
using THINKI Semiconductor advanced planar stripe, DMOS technol-
ogy intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high rugged
avalanche characteristics. The TO-220M pkg is well suited for
adaptor power unit and small power inverter application.
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
TO-220M
FQP65N06
60
65
46.1
260
± 25
650
65
15.0
7.0
150
1.00
-55 to +175
300
23
1
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Typ
Max
Units
--
1.00
°C/W
0.5
--
°C/W
--
62.5
°C/W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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