FMU32S Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 20.0 Ampere SwitchMode Common Cathode Fast Recovery Rectifiers

FMU32S thru FMU36S
®
FMU32S thru FMU36S
Pb
Pb Free Plating Product
20.0 Ampere SwitchMode Common Cathode Fast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: TO-247AD/TO-3P
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 5.6 gram approximately
TO-3P/TO-247AD
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
Unit : inch (mm)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
.095(2.4)
.030(0.75)
.017(0.45)
Case
Case
Case
Positive
Common Cathode
Suffix "S"
Negative
Doubler
Common Anode Tandem Polarity
Suffix "R"
Suffix "U"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL _FMU32S
Maximum Recurrent Peak Reverse Voltage VRRM
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=125^oC
IF(AV)
FMU33S
FMU34S
FMU36S
UNIT
400
600
V
280
420
V
400
600
V
20.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
200
(JEDEC method)
175
A
Maximum Instantaneous Forward Voltage
VF
0.98
@ 10.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
120
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
1.7
V
10.0
uA
250
uA
35-50
nS
70
pF
-55 to +150
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
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