FES16DT Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diode

FES16AT thru FES16JT
®
FES16AT thru FES16JT
Pb
Pb Free Plating Product
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diode
Features
Glass passivated chip junction
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
TO-220AC
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
Mechanical Data
Case: Heatsink TO-220AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approxiamtely
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Positive
Suffix "T"
Negative
Suffix "TR"
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Symbol ^FES
16AT
V_RRM
50
V_RMS
35
V_DC
50
FES
16BT
100
70
100
FES
16CT
150
105
150
FES
16DT
200
140
200
FES
16FT
300
210
300
FES
16GT
400
280
400
FES
16HT
500
350
500
FES
16JT
600
420
600
I_F(AV)
16
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@ 16 A
Maximum Reverse Current @ Rated VR T_A=25 ℃
T _A=100 ℃
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
I_FSM
V_F
I_R
Trr
Cj
R_θjC
T_J
T_STG
0.975
130
200
1.3
10
400
35
1
- 65 to + 150
- 65 to + 150
1.7
100
Unit
V
V
V
A
A
V
uA
nS
pF
℃/W
℃
℃
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I _F=0.5A, I_R=1.0A, I_RR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
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