FEP30DP Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 30.0 Ampere Dual Fast Efficient Positive Polarity Power Rectifiers

FEP30DP thru FEP30JP
®
FEP30DP thru FEP30JP
Pb
Pb Free Plating Product
30.0 Ampere Dual Fast Efficient Positive Polarity Power Rectifiers
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Ultrafast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
260^oC, 0.16”(4.06mm)from case for 10 seconds
Mechanical Data
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
TO-3P/TO-247AD
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
Unit: inch (mm)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
.095(2.4)
.030(0.75)
.017(0.45)
Positive
Common Cathode
Preffix "FEP"
Negative
Common Anode
Preffix "FEN"
Doubler
Series Connection
Preffix "FED"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125^oC
VRRM
VRMS
VDC
IF(AV)
FEP30DP
FEN30DP
FED30DP
200
140
200
FEP30GP
FEN30GP
FED30GP
400
280
400
30.0
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
300
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
1.3
@ 15.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
10
500
Maximum Reverse Recovery Time (Note 1) Trr
60
Typical junction Capacitance (Note 2)
CJ
150
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to +150
FEP30JP
FEN30JP ^UNIT
FED30JP
600
V
420
V
600
V
A
A
1.7
V
uA
uA
nS
pF
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.02
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/