F60SA60DS Datasheet, PDF (1/3 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Insulated Stealth Dual Series Connection Fast Recovery Rectifiers

F60SA60DS
®
Pb Free Plating Product
F60SA60DS
Pb
16.0 Ampere Insulated Stealth Dual Series Connection Fast Recovery Rectifiers
Features
Latest FRED technology with soft recovery characteristics
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Fully Isolated Molding TO-220FP
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Negative
Positive
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "DN"
Suffix "DP"
Suffix "DD"
Suffix "DS"
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VR
Maximum D.C. Reverse Voltage
V RRM
Maximum Repetitive Reverse Voltage
I F(AV)
Average Forward Current
I F(RMS)
I FSM
PD
TJ
T STG
Torque
R θJC
Weight
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
Thermal Resistance
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Test Conditions
Values
Unit
600
V
600
V
TC=110°C, Per Diode
8
A
TC=110°C, Per Package
16
A
TC=110°C, Per Diode
12
A
TJ=45°C, t=10ms, 50Hz, Sine
100
A
50
W
-40 to +150
°C
-40 to +150
°C
Recommended（M3）
1.1
N·m
Junction-to-Case
2.5
°C /W
2.1
g
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I RM
Reverse Leakage Current
VR=600V
VR=600V, TJ=125°C
--
--
15
µA
--
-- ^{250 µA}
VF
Forward Voltage
I F =8A
IF=8A, TJ=125°C
-- 1.8 2.4
V
-- 1.4 --
V
t rr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs --
17
--
ns
t rr
Reverse Recovery Time
VR=300V, IF=8A
--
30
--
ns
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=25°C
-- 2.3 --
A
t rr
Reverse Recovery Time
VR=300V, IF=8A
--
60
--
ns
I RRM
Max. Reverse Recovery Current diF/dt=-200A/μs, TJ=125°C
-- 4.8 --
A
Rev.07
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/3
http://www.thinkisemi.com.tw/