F16A20CT Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16.0 Ampere Heatsink Dual Common Anode Fast Recovery Diodes

F16A20CT thru F16A60CT
®
F16A20CT thru F16A60CT
Pb
Pb Free Plating Product
16.0 Ampere Heatsink Dual Common Anode Fast Recovery Diodes
Feature
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverters/Converters)
Plating Power Supply,Adaptor,SMPS and UPS
Car Audio Amplifiers and Sound Device System
Mechanical Data
Case:TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Case
Case
Case
Positive
Negative
* * ^Doubler
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
* ^{Prefix "F16C" Prefix "F16A" Available for Mass Production}
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL ^{F16C20CT F16C40CT F16C60CT} UNIT
F16A20CT F16A40CT F16A60CT
Maximum Recurrent Peak Reverse Voltage VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
16.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
175
(JEDEC method)
150
A
Maximum Instantaneous Forward Voltage
VF
0.98
1.3
@ 8.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
10.0
250
Maximum Reverse Recovery Time (Note 1) Trr
35
Typical junction Capacitance (Note 2)
CJ
90
Typical Thermal Resistance (Note 3)
R JC
2.2
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
1.7
V
uA
uA
nS
pF
o_C/W
o_C
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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