ES3A Datasheet, PDF (1/2 Pages) Diodes Incorporated – 3.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

ES3A thru ES3M
®
ES3A thru ES3M
Pb
Pb Free Plating Product
3 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes
FEATURE
Glass passivated chip junction
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
MECHANICAL DATA
Case:SMC/DO-214AB Package
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode band
Mounting Position: Any
Weight: 0.22 gram approximately
APPLICATION
LED SMPS/Industrial power supply
HID ballast stabilizer
Telecommunication SMPS/LED street lamp
OUTLINE
Unit:inch(millimeter)
Cathode Band
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.103 (2.62)
0.079 (2.06)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0.002(0.05)
0.320 (8.13)
0.305 (7.75)
SMC/DO-214AB
Maximum Ratings and Electrical Characteristics
Ratings at 25 ^OC ambient temperature unless otherwise specified. Single phase, half-wave, 60 Hz, resistive or
inductive load, for capacitive load derate current by 20%.
Parameter
Symbols ES3A ES3B ES3C ES3D ES3F ES3G ES3J ES3K ES3M Units
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 150 200 300 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 105 140 210 280 420 560 700 V
Maximum DC Blocking Voltage
VDC
50 100 150 200 300 400 600 800 1000 V
Maximum Average Forward Current
IF(AV)
3
A
Peak Peak Forward Surge Current, 8.3 ms Single Half
Sine-Wave Superimposed on Rated Load (JEDEC
IFSM
Method)
100
A
Maximum Forward Voltage at IF = 3 A
VF
0.95
1.3
1.7
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TA = 25 ^OC
TA = 100 ^OC
IR
10
µA
500
Maximum Reverse Recovery Time ¹⁾
trr
35
ns
Typical Junction Capacitance ²⁾
CJ
50
40
pF
Junction Temperature Range
Tj
- 55 to + 150
O_C
Storage temperature range
Ts
- 55 to + 150
O_C
1) _{Reverse recovery test conditions: IF = 0.5 A, IR = 1 A, Irr = 0.25 A}
2) _{Measured at 1 MHz and applied reverse voltage of 4 V D.C.}
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/