ER1602N Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 16 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers

ER1602N thru ER1606N
®
ER1602N/ER1604N/ER1606N
Pb
Pb Free Plating Product
16 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
TO-220AB
9.90±0.20
φ3.60^±0.20
4.50±0.20
Unit:mm
1.30±0.20
1.27±0.20
1.52±0.20
2.40±0.20
Mechanical Data
Case: Heatsink TO-220AB/TO-220CE
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
2.54typ
2.54typ
0.80±0.20
0.50±0.20
Case
Case
Case
Case
Positive
Negative
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "N"
Suffix "D"
Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL _{ER1602N ER1604N ER1606N} UNIT
Maximum Recurrent Peak Reverse Voltage VRRM
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
400
600
V
280
420
V
400
600
V
16.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
175
(JEDEC method)
150
A
Maximum Instantaneous Forward Voltage
VF
0.98
@ 8.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
5.0
100
35
90
2.2
-55 to + 150
1.7
V
uA
uA
nS
pF
o_C/W
o_C
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.06
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/