DK64N90 Datasheet, PDF (1/5 Pages) Thinki Semiconductor Co., Ltd. – N-Channel Trench Process Power MOSFET Transistors

DK64N90
®
Pb Free Plating Product
DK64N90
Pb
N-Channel Trench Process Power MOSFET Transistors
General Description
DK64N90 series is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
EAS capability and ultra low R_DS(ON) is suitable for PWM,
load switching especially for E-Bike controller applications.
Features
● V_DS=85V; I_D=92A@ V_GS=10V;
R_DS(ON)<7.45mΩ @ V_GS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● 64V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
● Inverter Application
● Amplifier Application
DK64N90
(TO-220 HeatSink)
G ^DS
DK64N90F
(TO-220F FullPak)
Schematic Diagram
DS
G
V_DS = 85 V
DK64N90S
(TO-263/D2PAK)
I_D = 92A
D
S
G
R_DS(ON) = 6.2 mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS
Drain-Source Voltage (VGS=0V)
VGS
Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}
dv/dt
Peak Diode Recovery Voltage
PD
Maximum Power Dissipation(Tc=25℃)
Derating Factor
EAS
Single Pulse Avalanche Energy ^{(Note 2)}
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=40V,VBGB=10V,RG=25Ω
Value
85
±25
92
64.4
368
30
139
0.93
625
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/5
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