DK48N88 Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – N-Channel Trench Process Power MOSFET Transistors

DK48N88
®
Pb Free Plating Product
DK48N88
Pb
N-Channel Trench Process Power MOSFET Transistors
General Description
The DK48N88 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM, load
switching especially for E-Bike controller applications.
Features
● VDS=70V；ID=88A@ VGS=10V；
RDS(ON)<5.2mΩ @ VGS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● 48V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
DK48N88
(TO-220 HeatSink)
G ^DS
Schematic Diagram
VDSS = 70V
IDSS = 88A
RDS(ON) = 4.8mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS
Drain-Source Voltage (VGS=0V）
VGS
Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}
dv/dt
Peak Diode Recovery Voltage
PD
Maximum Power Dissipation(Tc=25℃)
Derating Factor
EAS
Single Pulse Avalanche Energy ^{(Note 2)}
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=48.5A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Value
70
±25
88
85
320
30
145
1.9
590
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
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