DB101S Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER

DB101S thru DB107S
®
Pb Free Plating Product
DB101S thru DB107S
Pb
1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier
Features
• Glass passivated chip junction
• Low forward voltage drop
• High surge overload rating of 50 A peak
• Ideal for printed circuit board
DB-S/DF-S
Unit : inch (mm)
.335(8.51)
.316(8.05)
.009(0.25)
Mechanical Data
• Case: Molded plastic, DB-S/DF-S
• Epoxy: UL 94V-0 rate flame retardant
• Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
• Mounting position: Any
.045(1.14)
.035(0.89)
.205(5.2)
.195(5.0)
Absolute Maximum Ratings and Characteristics
Ratings at 25 ^OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Symbols
DB101S DB102S DB103S DB104S DB105S DB106S DB107S
DF005S DF01S DF02S DF04S DF06S DF08S DF10S
Unit
V_RRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
V_RMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
V_DC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current at T_A = 40 ^OC I_(AV)
1
A
Peak Forward Surge Current 8.3 ms Single Half-sine-wave
Superimposed on Rated Load (JEDEC Method)
I_FSM
50
A
Maximum Forward Voltage at 1 A
V_F
1.1
V
Maximum Reverse Current at Rated at T_A = 25 ^OC
I_R
DC Blocking Voltage
at T_A = 125 ^OC
Typical Junction Capacitance ¹⁾
CJ
5
µA
500
25
pF
Typical Thermal Resistance ²⁾
Typical Thermal Resistance ²⁾
R_θJA
R_θJL
40
O_C/W
15
O_C/W
Operating and Storage Temperature Range
T_J ,T_S
-55 to +150
O_C
1) _{Measured at 1 MHz and applied reverse voltage of 4 V}
2) _{Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.5 X 0.5" (13 X 13}
mm) copper pads.
© 2006 Thinki Semiconductor Co.,Ltd.
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