D10LD20UR Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 10 Ampere Dual Doubler Polarity Super Fast Recovery Half Bridge Rectifiers

D10LD20UR thru D10LD60UR
®
Pb Free Plating Product
D10LD20UR thru D10LD60UR
Pb
10 Ampere Dual Doubler Polarity Super Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,EPS and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit:mm
Mechanical Data
Case: Fully Isolated Molding TO-220F
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Positive
Negative
Common Cathode Common Anode
Prefix "D10LC" Prefix "D10LC"
&Suffix "U"
&Suffix "UR"
Doubler
Series Connection
Tandem Polarity Tandem Polarity
Prefix "D10LD" Prefix "D10LD"
&Suffix "UR"
&Suffix "U"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL _{D10LD20UR D10LD40UR D10LD60UR} UNIT
Maximum Recurrent Peak Reverse Voltage VRRM
200
Maximum RMS Voltage
VRMS
140
Maximum DC Blocking Voltage
VDC
200
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
Maximum Instantaneous Forward Voltage
VF
0.98
@ 5.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
IR
Trr
CJ
R JC
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
400
280
400
10.0
100
1.3
5.0
100
35
65
2.2
-55 to +150
600
V
420
V
600
V
A
A
1.7
V
uA
uA
nS
pF
o_C/W
o_C
Rev.06
© 2006 Thinki Semiconductor Co.,Ltd.
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