CTG-32S Datasheet, PDF (1/2 Pages) Thinki Semiconductor Co., Ltd. – 20.0 Ampere Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers

CTG-32S thru CTG-36S
®
CTG-32S/CTG-33S/CTG-34S/CTG-36S
Pb
Pb Free Plating Product
20.0 Ampere Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: TO-247AD/TO-3P
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 5.6 gram approximately
TO-3P/TO-247AD
.142(3.6)
.125(3.2)
.640(16.25)
.620(15.75)
Unit : inch (mm)
.199(5.05)
.175(4.45)
.126(3.2)
.110(2.8)
.050(1.25)
.045(1.15)
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
.095(2.4)
.030(0.75)
.017(0.45)
Case
Case
Case
Case
Positive
Negative
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "S"
Suffix "R"
Suffix "U"
Suffix "UR"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL
VRRM
VRMS
CTG-32S
200
140
CTG-33S
CTG-34S
400
280
CTG-36S ^UNIT
600
V
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
Current TC=125^oC
IF(AV)
20.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
200
(JEDEC method)
175
A
Maximum Instantaneous Forward Voltage
VF
0.98
@ 10.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1)
Trr
Typical junction Capacitance (Note 2)
CJ
120
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
1.7
V
10.0
uA
250
uA
35
nS
70
pF
-55 to +150
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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