CS48N75 Datasheet, PDF (1/5 Pages) Thinki Semiconductor Co., Ltd. – 70V,68A N-Channel Trench Process Power MOSFET

CS48N75
®
Pb Free Plating Product
CS48N75
Pb
70V,68A N-Channel Trench Process Power MOSFET
General Description
The CS48N75 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low R_DS(ON) is suitable for PWM, load
switching especially for E-Bike controller applications.
Features
● V_DS=70V；I_D=68A@ V_GS=10V；
R_DS(ON)<8.4mΩ @ V_GS=10V
● Special Designed for E-Bike Controller Application
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● 48V E-Bike Controller Applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
CS48N75
(TO-220 HeatSink)
G ^DS
Schematic Diagram
V_DS = 70 V
I_D = 68A
R_DS(ON) = 7mΩ
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS
Drain-Source Voltage (VGS=0V)
VGS
Gate-Source Voltage (VDS=0V)
ID (DC)
Drain Current (DC) at Tc=25℃
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}
dv/dt
Peak Diode Recovery Voltage
PD
Maximum Power Dissipation(Tc=25℃)
Derating Factor
EAS
Single Pulse Avalanche Energy ^{(Note 2)}
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25℃,VDD=33V,VG=10V,ID=37A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Value
70
±25
68
47.6
272
30
85
0.57
342
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
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