BYV26A Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SUPER FAST RECTIFIERS

BYV26A thru BYV26G
®
BYV26A thru BYV26G
Pb
Pb Free Plating Product
1.0 AMP.ULTRA FAST RECOVERY RECTIFIERS
Features
D Glass passivated junction
D Hermetically sealed package
D Very low switching losses
D Low reverse current
D High reverse voltage
Applications
SOD-57
Unit: inch(mm)
Switched mode power supplies
High–frequency inverter circuits
94 9539
Maximum Ratings and Electrical Characteristics
Rating at 25 ^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Symbol BYV
26A
V_{RRM 200V}
BYV
26B
400V
BYV BYV
26C 26D
600V 800V
BYV BYV Units
26E 26G
1000V 1400V V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@T_A = 55 ^oC
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Reverse Recovery Time (Note 1)
Maximum DC Reverse Current @ T_A=25 ^oC
at Rated DC Blocking Voltage @ T_A=150 ^oC
Maximum Instantaneous Forward Voltage
@ 1.0A @
@ 1.0A @
TT_AA==2157^o₅C_oC
Maximum Reverse recovery Current Slope
dIr/dt @ IF=1A, VR=30V, dIf/dt = 1A / uS
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
V_DC
I_(AV)
I_FSM
Trr
I_R
V_F
dv/dt
Cj
RθJA
T_J
T_STG
300V 500V 700V 900V 1100V 1500V V
1.0
A
30
30
75
5.0
100
2.5
1.3
7
45
40
-55 to +175
-55 to +175
A
nS
uA
uA
V
A/uS
pF
o_{C /W}
o_C
o_C
Notes:
1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 5mm x 5mm on PCB.
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/