2SD2583 Datasheet, PDF (1/5 Pages) NEC – AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS

2SD2583
®
2SD2583
Pb
Pb Free Plating Product
NPN Silicon Epitaxial Power Transistor
FEATURES
• Low VCE(sat)
VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA)
• High DC Current Gain
hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25 °C)
Collector to Base Voltage
VCB0
30 V
Collector to Emitter Volteage
VCE0
30 V
Emitter to Base Voltage
VEB0
6.0 V
Collector Current (DC)
IC(DC)
5.0 A
Collector Current (Pulse)*
IC(Pulse)
10 A
Base Current (DC)
IB(DC)
2.0A
* PW ≤ 10ms, Duty Cycle ≤ 10 %
Maximum Power Dissipation
Total Power Dissipation (TC = 25 °C) PT
10 W
Total Power Dissipation (TA = 25 °C) PT
1.0 W
Maximum Temperature
Junction Temperature
Tj
150 °C
Storage Temperature
Tstg −55 to 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PACKAGE DIMENSIONS
in millimeters (inches)
8.5 MAX.
(0.334 MAX.)
2.8 MAX.
(0.110 MAX.)
φ 3.2 ± 0.2 (φ 0.126)
1 23
1.2
(0.047)
0.8
+0.08
−0.05
(0.031)
2.3 2.3
(0.090) (0.090)
0.55⁺−00..0058
(0.021)
1.2
(0.047)
1. Emitter
2. Collector connected to mounting plane
3. Base
CHARACTERISTICS
Collector Cutoff Currnet
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Saturation Voltage
Collector Saturation Voltage
Base Saturation Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
TEST CONDITIONS
ICB0
VCB = 30 V, IE = 0
IEB0
VEB = 6.0 V, IC = 0
hFE1
VCE = 2.0 V, IC = 1.0 A
hFE2
VCE = 2.0 V, IC = 4.0 A
VCE(sat)1 IC = 1.0 A, IB = 50 mA
VCE(sat)2 IC = 2.0 A, IB = 0.1 A
VCE(sat)3 IC = 4.0 A, IB = 0.2 A
VBE(sat) IC = 2.0 A, IB = 0.1 A
fT
VCE = 10 V, IE = 50 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
MIN.
150
50
TYP.
0.07
0.13
0.24
0.86
120
77
MAX.
100
100
600
0.15
0.25
0.50
1.50
UNIT
nA
nA
−
−
V
V
V
V
MHz
pF
© 2006 Thinki Semiconductor Co.,Ltd.
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