2SD1351 Datasheet, PDF (1/1 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors

2SD1351
®
2SD1351
Pb
Pb Free Plating Product
NPN Complementary Silicon Power Transistors
FEATURES
z Complements the 2SB988.
z Wide Safe Operationg Area.
z Fast Switching Speed.
z Wide ASO.
APPLICATIONS
z Power Amplifier Applications.
z Vertical Output Applications.
z Switching Applications.
TO-220C
COLLECTOR
2
BASE
1
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
23
1
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)
Parameter
l
Value Unit
Collector-Base Voltage
V_CBO
60
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
V_CEO
V_EBO
I_C
I_B
P_tot
T_j
T_stg
60
V
7
V
3.0 A
0.5 A
30 W
150 ^oC
-55~150 ^oC
9.90±0.20
φ3.60^±0.20
4.50±0.20
1.30±0.20
1.27±0.20
1.52±0.20
2.40±0.20
2.54typ
2.54typ
0.80±0.20
TO-220C Package Dimension
0.50±0.20
Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS ( Ta = 25 ^OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
I_CBO
I_EBO
V_CEO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
V_CB=60V, I_E=0
V_EB=7V, I_C=0
I_C=50mA, I_B=0
V_CE=5V, I_C=0.5A
V_CE=4V, I_C=3.0A
I_C=2A,I_B=200mA
V_CE=5V,I_C=0.5A
V_CE=5V,I_C=500mA
Min.
—
—
60
60
25
—
—
3.0
Typ.
—
—
—
—
—
—
—
—
Max. Unit
0.1 mA
0.1 mA
—
V
300
—
1.0 V
1.0 V
— MHz
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
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