2SC2625 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,400V,80W)

2SC2625
®
Pb Free Plating Product
2SC2625
Pb
80 WATT NPN EPITAXIAL SILICON TRANSISTOR
Features
High voltage,High speed switching
High reliability
Applications
Switching regulators
Ultrasonic generators
High frequency inverters
General purpose power amplifiers
Collector
Base
Emitter
E
C
B
Fig.1 simplified outline (TO-3PB) and symbol
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Base current
Collector power disspation
Operating junction temperature
Storage temperature
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
IC
IB
PC
Tj
Tstg
Ratings
450
400
400
7
10
3
80
+150
-55 to +150
Unit
V
V
V
V
A
A
W
°C
°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Base leakage current
Emitter-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
*1
Switching time
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf
Test Conditions
ICBO = 1mA
ICEO = 10mA
IC = 1A
IEBO = 0.1mA
VCBO = 450V
VEBO = 7V
IC = 4A, VCE = 5V
IC = 4A, IB = 0.8A
IC = 7.5A, IB1 = -IB2 = 1.5A
RL = 20 ohm ,Pw = 20µs Duty=<2%
Min.
450
400
400
7
10
Typ.
-
-
-
-
Max.
1.0
0.1
Units
V
V
V
V
mA
mA
1.2
V
1.5
V
1.0
µs
2.0
µs
1.0
µs
Thermal characteristics
Item
Thermal resistance
Symbol
Rth(j-c)
Test Conditions
Junction to case
Min. Typ.
Max. Units
1.55 °C/W
© 2006 Thinki Semiconductor Co.,Ltd.
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