2P4M Datasheet, PDF (1/3 Pages) NEC – 2A PLASTIC MOLDED THYRISTOR

2P4M
®
2P4M
Pb
Pb Free Plating Product
2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR
DESCRIPTION:
ThinkiSemi 2P4M SCR with the parallel resistor
between Gate and Cathode are especially
recommended for use on straight hair, igniter,
anion generator etc..
MAIN FEATURES
TO-202 Pkg Outline
Symbol
Value
Unit
I_T(RMS)
2
A
I_GT
≤200
μA
V_TM
≤1.5
V
ABSOLUTE MAXIMUM RATINGS
Internal structure
A(2)
K(1)
RGK
G(3)
3
2
1
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Symbol
T_stg
T_j
V_DRM
V_RRM
Value
-40-150
-40-110
600
600
Unit
℃
℃
V
V
RMS on-state current
@ (T_C=72℃) I_T(RMS)
2
A
Non repetitive surge peak on-state current
(tp=10ms)
I²t value for fusing (tp=10ms)
Critical rate of rise of on-state current
Peak gate current (tp=20μs, Tj=110℃)
Peak gate power (tp=20μs, Tj=110℃)
Average gate power dissipation(T_j=110℃)
I_TSM
I²t
dI/dt
I_GM
P_GM
P_G(AV)
20
A
2
A²s
50
A/μs
0.2
A
0.5
W
0.1
W
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
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