1N5221B Datasheet, PDF (1/2 Pages) Vishay Siliconix – Silicon Z-Diodes

1N5221B thru 1N5259B
®
1N5221B thru 1N5259B
Pb
Pb Free Plating Product
0.5 Watt DO-35G Hermetically Sealed Pkg Zener Diodes
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Parameter
Value
Units
Power Dissipation
500
mW
Storage Temperature Range
-65 to +200
°C
Operating Junction Temperature
+200
°C
Lead Temperature (1/16” from case for 10 seconds)
+230
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
AXIAL LEAD
DO-35G
Specification Features:
Zener Voltage Range 2.4 to 39 Volts
DO-35G Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
Cathode
Anode
ELECTRICAL SYMBOL
Electrical Characteristics
Device Type
V_Z @ I_ZT
(Volts)
Nominal
1N5221B
2.4
1N5222B
2.5
1N5223B
2.7
1N5224B
2.8
1N5225B
3
1N5226B
3.3
1N5227B
3.6
1N5228B
3.9
1N5229B
4.3
1N5230B
4.7
1N5231B
5.1
1N5232B
5.6
1N5233B
6
1N5234B
6.2
1N5235B
6.8
1N5236B
7.5
1N5237B
8.2
1N5238B
8.7
1N5239B
9.1
1N5240B
10
1N5241B
11
1N5242B
12
1N5243B
13
1N5244B
14
T_A = 25°C unless otherwise noted
IZT
(mA)
ZZT @ IZT
(Ω)
Max
20
30
20
30
20
30
20
30
20
29
20
28
20
24
20
23
20
22
20
19
20
17
20
11
20
7
20
7
20
5
20
6
20
8
20
8
20
10
20
17
20
22
20
30
9.5
13
9
15
ZZK @ IZK = 0.25mA
(Ω)
Max
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
IR @ VR
(µA)
Max
100
100
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
VR
(Volts)
1
1
1
1
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/