10SQ050 Datasheet, PDF (1/2 Pages) Gaomi Xinghe Electronics Co., Ltd. – SCHOTTKY BARRIER RECTIFLER

10SQ050
®
10SQ050
Pb
Pb Free Plating Product
10A,50V PhotoVoltaic Bypass Schottky Barrier Rectifier Diode
FEATURES
● _{The plastic package carries Underwriters Laboratory}
Flammability Classification 94V-0
● _{Construction utilizes void-free}
molded plastic technique
● _{Low reverse leakage}
● High forward surge current capability
● High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
R-6
0.360 (9.1)
0.340(8.6)
DIA.
1.0 (25.4)
MIN.
0.360(9.1)
0.340(8.6)
MECHANICAL DATA
Case: R-6 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.072 ounce, 2.05 grams
0.052 (1.3)
0.048 (1.2)
DIA.
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
SYMBOL
10SQ050
Maximum Repetitive Peak Reverse Voltage
V_RRM
50
Maximum RMS Voltage
V_RMS
35
Maximum DC Blocking Voltage
V_DC(AV)
50
Average Rectified Output Current
@Tc=130°C
I_F
10
UNIT
V
V
V
A
Peak Forward Surge Current 8.3ms single half sine-wave
Tj=25°C
I_FSM
Maximum Forward Voltage at 10A DC
Note(1)
Tj=25°C
V_F
Maximum DC Reverse Current at Rated DC Tj=25°C
Blocking Voltage
Tj=100°C
IR
Typical thermal resistance Junction to Case (Note 3)
Typical thermal resistance Junction to Ambient (Note 3)
Typical Thermal Resistance (Note 2)
Operating junction temperature
Junction temperature in DC forward current without reverse
bias, t ≦ 1 h
RΘ_JC
RΘ_JA
CJ
T_J
Tj
(Note 4)
Storage temperature range
T_STG
Note :
(1) 300us Pulse Width, 2% Duty Cycle.
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 V_DC.
(3) Thermal Resistance test performed in accordance with JESD-51.
(4) Meets the requirement of IEC 61215 ed. 2 bypass diode thermal test
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
250
0.55
0.05
10
11
28
720
125
≦200
-55 to +150
A
V
mA
°C/W
°C/W
pF
°C
°C
°C
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