10F40HF3S Datasheet, PDF (1/2 Pages) JILIN SINO-MICROELECTRONICS CO., LTD. – FAST RECOVER DIODE

10F20HF3S thru 10F40HF3S
®
10F20HF3S thru 10F40HF3S
Pb
Pb Free Plating Product
10.0 Ampere Insulated Common Anode Super Fast Recovery Rectifiers
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
TO-220HF-3L
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
Mechanical Data
¬ Case:Fully plastic isolation TO-220HF-3L
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:As marked on diode body
¬ Mounting position: Any
¬ Weight: 2.0 gram approximately
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Positive
Negative
Common Cathode Common Anode
Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25^oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL ^10F20HF3
10F20HF3S
VRRM
200
VRMS
140
10F30HF3 10F40HF3 _UNIT
10F30HF3S 10F40HF3S
300
400
V
210
280
V
Maximum DC Blocking Voltage
VDC
200
300
400
V
Maximum Average Forward Rectified
Current TC=100^oC
IF(AV)
10.0
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load IFSM
(JEDEC method)
100
A
Maximum Instantaneous Forward Voltage
VF
0.98
@ 5.0 A
Maximum DC Reverse Current @TJ=25^oC
At Rated DC Blocking Voltage @TJ=125^oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
1.3
10.0
250
35
65
2.2
-55 to +150
1.3
V
uA
uA
nS
pF
o_CW
o_C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.05/2015
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
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